power transistors 1 2sd2178 2sd2178 2sd2178 2sd2178 2sd2178 silicon npn epitaxial planar type for low-frequency output amplification features ? low collector to emitter saturation voltage v ce(sat) ? large collector current i c absolute maximum ratings t a = 25 c 1: emitter 2: collector 3: base mt-3 (mt3 type package) unit: mm parameter symbol rating unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5v peak collector current i cp 3a collector current i c 2a collector power dissipation p c 1.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c electrical characteristics t c = 25 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 20 v, i e = 0 0.1 a collector to base voltage v cbo i c = 10 a, i e = 0 50 v collector to emitter voltage v ceo i c = 1 ma, i b = 0 50 v emitter to base voltage v ebo i e = 10 a, i c = 0 5 v forward current transfer ratio h fe1 * v ce = 2 v, i c = 200 ma 120 340 h fe2 v ce = 2 v, i c = 1.0 a 80 collector to emitter saturation voltage v ce(sat) i c = 1 a, i b = 50 ma 0.15 0.3 v base to emitter saturation voltage v be(sat) i c = 1 a, i b = 50 ma 0.9 1.2 v transition frequency f t v ce = 10 v, i e = ? 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 23 35 pf 7.5 ?.2 0.65 ?.1 0.7 ?.1 1.15 ?.2 2.5 ?.2 2.5 ?.2 0.85 ?.1 1.0 ?.1 0.7 ?.1 1.15 ?.2 0.5 ?.1 1 0.8 c 23 0.4 ?.1 4.5 ?.2 0.8 c 0.8 c 3.8 ?.2 16.0 ?.0 10.8 ?.2 2.05 ?.2 90? 2.5 ?.1 note) * : rank classification rank r s h fe1 120 to 240 170 to 340
power transistors 2 2sd2178 v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb r th(t) ? t 0 160 40 120 80 140 20 100 60 0 0.4 0.8 1.2 1.6 2.0 without heat sink ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 012 210 48 6 0 120 100 80 60 40 20 i b =400 a 350 a 300 a 250 a 200 a 150 a 100 a 50 a ta=25 ? c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.001 0.003 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 i c /i b =50 ta=75 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 i c /i b =50 25 ? c 75 ? c ta= 25 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0 0.01 0.03 300 250 200 150 100 50 0.1 0.3 1 3 10 v ce =2v ta=75 ? c ta=25 ? c ta= 25 ? c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 240 200 160 120 80 40 v cb =10v f=200mhz ta=25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 0 1 60 50 40 30 20 10 3 10 30 100 i e =0 f=1mhz ta=25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 10 1 1 10 10 2 10 4 10 3 10 4 10 4 10 3 10 2 10 1 10 1 10 2 10 3 without heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese govern- ment if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar
|
